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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5439 DESCRIPTION With TO-220F package High collector breakdown voltage Excellent switching times APPLICATIONS Switching regulator applications High voltage switching applications DC-DC converter applications Inverter lighting applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 1000 450 9 8 16 1 Ta=25ae 2 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Collector current Collector current-peak Base current Open collector Emitter UNIT V V V A A A PC Collector power dissipation TC=25ae 30 150 -55~150 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC5439 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 450 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 1000 V VCEsat Collector-emitter saturation voltage IC=3.2A; IB=0.64 A 1.0 V VBEsat Base-emitter saturation voltage IC=3.2A; IB=0.64 A 1.5 V ICBO Collector cut-off current VCB=1000V; IE=0 100 |I A IEBO Emitter cut-off current VEB=7V; IC=0 10 |I A hFE-1 hFE-2 Switching times ton ts TOR NDU ICO E SEM ANG INCH DC current gain IC=1A ; VCE=5V 14 Turn-on time 0.2 Storage time IB1=0.64A ;IB2=1.28A VCCO 200V;RL=62.5| 2.0 Fall time 0.15 DC current gain IC=1mA ; VCE=5V 10 34 |I s 3.5 |I s tf |I s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5439 TOR NDU ICO E SEM ANG INCH Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5439 TOR NDU ICO E SEM ANG INCH 4 |
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